General description
This higher conductivity doped material can be used in a variety of electronic and optical devices including transistors, photovoltaics, sensors and piezoelectric generators. The P-i-P designation implies that the ends of these nanowires are P-type and the middle is intrinsic. The heavily p-doped ends should contact well with metals creating an ‘instant’ semiconductor. They can be assembled onto different substrates, such as flexible or transparent ones among others.Length of Undoped Channel = 3 μmReferences:1) Freer, E. M.; Grachev, O.; Duan, X.; Martin, S.; Stumbo, D. P. Nat. Nanotechnol., 2010, 5, 525-530.2) McAlpine, M. C.; Ahmad, H.; Wang, D.; Heath, J. R. Nat. Mater., 2007, 6, 379-384.
Typically 1 μg/mL in Isopropyl alcohol
包装
1 mL in glass bottle
Legal Information
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