Substance
ID:323871
Names and Identifiers
Synonyms
硅Silicon
IUPAC name
silicon
IUPAC Traditional name
silicon
Properties
Product Information
Contains
phosphorus as dopant
Diam. × Thickness
3 in. × 0.5 mm
Linear Formula
Si
Physical Property
Melting Point
1410 °C(lit.)
1240 °C
Density
2.33 g/mL at 25 °C(lit.)
Boiling Point
2355 °C(lit.)
Semiconductor Properties
<100>, N-type
Apperance
crystalline (cubic (a = 5.4037))
wafer (single side polished)
Safety Information
MSDS Link
Personal Protective Equipment
Eyeshields, Gloves, type N95 (US), type P1 (EN143) respirator filter
German water hazard class
2
Molecule Details
Packaging
1 ea in rigid mailer
Physical properties
0 vortex defects. Etch pitch density (EPD) < 100 (cm-2). Resistivity 10-3 - 40 Ωcm
Oxygen content: <= 1~1.8 x 1018 /cm3; Carbon content: <= 5 x 1016 /cm3; Boule diameter: 1~8 ″
1 ea in rigid mailer
Physical properties
0 vortex defects. Etch pitch density (EPD) < 100 (cm-2). Resistivity 10-3 - 40 Ωcm
Oxygen content: <= 1~1.8 x 1018 /cm3; Carbon content: <= 5 x 1016 /cm3; Boule diameter: 1~8 ″
Molecular Spectra
No Data Available
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References
No Data Available
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