Substance
ID:322077
Names and Identifiers
IUPAC name
silicon
IUPAC Traditional name
silicon
Synonyms
NanoFET-PIPMonodispersed silicon nanowires
Properties
Product Information
Compostion
, >99% ( Silicon-basis)
Contains
>1 x 10^19 /cm3 Doping
diam. × L
150 nm ± 30 nm × 20 μm ± 2 μm
Safety Information
GHS Pictograms
Flammable gases, category 1
Flammable aerosols, categories 1,2
Flammable liquids, categories 1,2,3
Self-reactive substances and mixtures, Types B,C,D,E,F
Pyrophoric liquids, category 1
Pyrophoric solids, category 1
Self-heating substances and mixtures
Substances and mixtures, which in contact with water, emit flammable gases, categories 1,2,3
Organic peroxides, Types B,C,D,E,F
Acute toxicity (oral, dermal, inhalation), category 4
Skin irritation, category 2
Eye irritation, category 2
Skin sensitisation, category 1
Specific Target Organ Toxicity – Single exposure, category 3
GHS Signal Word
Danger
European Hazard Symbols
Irritant (Xi)
Flammable (F)Risk Statements
11-36-67
German water hazard class
1
MSDS Link
GHS Hazard statements
H225-H319-H336
Safety Statements
7-16-24/25-26
GHS Precautionary statements
P210-P261-P305+P351+P338
Physical Property
Density
0.78 g/mL at 25 °C
Flash Point
53.6 °F
12 °C
Apperance
dispersion
Molecule Details
General description
This higher conductivity doped material can be used in a variety of electronic and optical devices including transistors, photovoltaics, sensors and piezoelectric generators. The P-i-P designation implies that the ends of these nanowires are P-type and the middle is intrinsic. The heavily p-doped ends should contact well with metals creating an ‘instant’ semiconductor. They can be assembled onto different substrates, such as flexible or transparent ones among others.Length of Undoped Channel = 3 μmReferences:1) Freer, E. M.; Grachev, O.; Duan, X.; Martin, S.; Stumbo, D. P. Nat. Nanotechnol., 2010, 5, 525-530.2) McAlpine, M. C.; Ahmad, H.; Wang, D.; Heath, J. R. Nat. Mater., 2007, 6, 379-384.
Typically 1 μg/mL in Isopropyl alcohol
Packaging
1 mL in glass bottle
Legal Information
Product of Nanosys, Inc.
This higher conductivity doped material can be used in a variety of electronic and optical devices including transistors, photovoltaics, sensors and piezoelectric generators. The P-i-P designation implies that the ends of these nanowires are P-type and the middle is intrinsic. The heavily p-doped ends should contact well with metals creating an ‘instant’ semiconductor. They can be assembled onto different substrates, such as flexible or transparent ones among others.Length of Undoped Channel = 3 μmReferences:1) Freer, E. M.; Grachev, O.; Duan, X.; Martin, S.; Stumbo, D. P. Nat. Nanotechnol., 2010, 5, 525-530.2) McAlpine, M. C.; Ahmad, H.; Wang, D.; Heath, J. R. Nat. Mater., 2007, 6, 379-384.
Typically 1 μg/mL in Isopropyl alcohol
Packaging
1 mL in glass bottle
Legal Information
Product of Nanosys, Inc.
Molecular Spectra
No Data Available
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References
No Data Available
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