Substance
ID:320251
Names and Identifiers
IUPAC Traditional name
gallium antimonide
IUPAC name
gallanylidynestibane
Synonyms
Gallium antimonide锑化镓
Properties
Safety Information
European Hazard Symbols
Nature polluting (N)
Harmful (Xn)Hazard Class
6.1
GHS Hazard statements
H302-H332-H411
MSDS Link
GHS Precautionary statements
P273
RID/ADR
UN 1549 6.1/PG 3
GHS Signal Word
Warning
UN Number
1549
Risk Statements
20/22-51/53
GHS Pictograms
Hazardous to the aquatic environment
Acute hazard, category1
Chronic hazard, categories 1,2
Acute toxicity (oral, dermal, inhalation), category 4
Skin irritation, category 2
Eye irritation, category 2
Skin sensitisation, category 1
Specific Target Organ Toxicity – Single exposure, category 3
German water hazard class
2
Personal Protective Equipment
dust mask type N95 (US), Eyeshields, Gloves
Safety Statements
61
Packing Group
3
Physical Property
Semiconductor Properties
<100>
Melting Point
710 °C
980 °C(lit.)
Resistivity
~0.1 Ω-cm
Apperance
(single crystal substrate)
Density
5.619 g/mL at 25 °C
5.62 g/mL at 25 °C(lit.)
Product Information
Diam. × Thickness
2 in. × 0.5 mm
Linear Formula
GaSb
Molecule Details
Packaging
1 ea in rigid mailer
Physical form
cubic (a = 6.095Å)
Physical properties
Thermal expansion: 6.1 x 10-6/oK; Thermal conductivity: 270 mW/cm.k at 300K; Mobility 600~800 cm2/V · sec
Undoped, P-type semiconductor, growth technique: LEC, carrier concentration = 1-2 × 10-17 cm-3, EPD <103 cm-2
1 ea in rigid mailer
Physical form
cubic (a = 6.095Å)
Physical properties
Thermal expansion: 6.1 x 10-6/oK; Thermal conductivity: 270 mW/cm.k at 300K; Mobility 600~800 cm2/V · sec
Undoped, P-type semiconductor, growth technique: LEC, carrier concentration = 1-2 × 10-17 cm-3, EPD <103 cm-2
Molecular Spectra
No Data Available
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References
No Data Available
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