Substance
ID:319850
Names and Identifiers
Synonyms
硅Silicon
IUPAC name
silicon
IUPAC Traditional name
silicon
Properties
Product Information
Diam. × Thickness
2 in. × 0.5 mm
Does not contain
dopant
Linear Formula
Si
Physical Property
Semiconductor Properties
<111>, N-type
Apperance
wafer (single side polished)
crystalline (cubic (a = 5.4037))
Boiling Point
2355 °C(lit.)
Density
2.33 g/mL at 25 °C(lit.)
Melting Point
1410 °C(lit.)
Safety Information
MSDS Link
RTECS
VW0400000
Personal Protective Equipment
Eyeshields, Gloves, type N95 (US), type P1 (EN143) respirator filter
German water hazard class
2
Molecule Details
Packaging
1 ea in padded box
5 ea in rigid mailer
Physical properties
0 vortex defects. Etch pitch density (EPD) < 100 (cm-2). Resistivity 100 - 3000 Ωcm.
Oxygen content: <= 1~1.8 x 1018 /cm3; Carbon content: <= 5 x 1016 /cm3; Boule diameter: 1~8 ″
1 ea in padded box
5 ea in rigid mailer
Physical properties
0 vortex defects. Etch pitch density (EPD) < 100 (cm-2). Resistivity 100 - 3000 Ωcm.
Oxygen content: <= 1~1.8 x 1018 /cm3; Carbon content: <= 5 x 1016 /cm3; Boule diameter: 1~8 ″
Molecular Spectra
No Data Available
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References
No Data Available
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