Substance
ID:319145
Names and Identifiers
IUPAC name
oxo[(oxoalumanyl)oxy]alumane
Synonyms
AluminaAluminum oxide氧化铝矾土Sapphire蓝宝石
IUPAC Traditional name
aluminium oxide
Properties
Product Information
Description
Crystallographic D spacing ((1120) - a plane: 2.379 Angstrom)
Crystallographic D spacing ((1040) - m plane: 1.375 Angstrom)
single side polished
Crystallographic D spacing ((1011) - s plane: 1.961 Angstrom)
Crystallographic D spacing ((0001) - c plane: 2.165 Angstrom)
Crystallographic D spacing ((1102) - r plane: 1.740 Angstrom)
Crystallographic D spacing ((1123) - n plane: 1.147 Angstrom)
Hardness
9 mohs
Linear Formula
Al2O3
Size
10 mm × 10 mm × 0.5 mm
Safety Information
Personal Protective Equipment
Eyeshields, Gloves, type N95 (US), type P1 (EN143) respirator filter
MSDS Link
RTECS
BD1200000
German water hazard class
nwg
Physical Property
Semiconductor Properties
<0001>
Apperance
single crystal substrate
Melting Point
2040 °C(lit.)
Molecule Details
Packaging
1, 5 ea in rigid mailer
Physical form
Crystalline, hexagonal (a = 4.758 Å, c = 12.992)
Features and Benefits
Common substrate for III-V nitrides as well as many other epitaxial films.
Physical properties
thermal expansion = 7.5 × 10-6 /°C; specific heat = 0.10 cal/°C; thermal conductivity = 46.06 @ 0 °C, 25.12 @ 100 °C, 12.56 @ 400 °C (W/m,K); dielectric constant = ~9.4 @ 300 K at A axis, ~11.58 @ C axis; loss tangent at 10 GHz < 2 × 10-5 at A axis, 5 × 10-6 at C axis
1, 5 ea in rigid mailer
Physical form
Crystalline, hexagonal (a = 4.758 Å, c = 12.992)
Features and Benefits
Common substrate for III-V nitrides as well as many other epitaxial films.
Physical properties
thermal expansion = 7.5 × 10-6 /°C; specific heat = 0.10 cal/°C; thermal conductivity = 46.06 @ 0 °C, 25.12 @ 100 °C, 12.56 @ 400 °C (W/m,K); dielectric constant = ~9.4 @ 300 K at A axis, ~11.58 @ C axis; loss tangent at 10 GHz < 2 × 10-5 at A axis, 5 × 10-6 at C axis
Molecular Spectra
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References
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