Substance
ID:309026
Names and Identifiers
Synonyms
Silicon tetrahydride四氢化硅Silane硅烷
IUPAC Traditional name
silane
IUPAC name
silane
Properties
Safety Information
RID/ADR
UN 2203 2.1
Risk Statements
12-17-20
German water hazard class
1
GHS Pictograms
Flammable gases, category 1
Flammable aerosols, categories 1,2
Flammable liquids, categories 1,2,3
Self-reactive substances and mixtures, Types B,C,D,E,F
Pyrophoric liquids, category 1
Pyrophoric solids, category 1
Self-heating substances and mixtures
Substances and mixtures, which in contact with water, emit flammable gases, categories 1,2,3
Organic peroxides, Types B,C,D,E,F
Acute toxicity (oral, dermal, inhalation), category 4
Skin irritation, category 2
Eye irritation, category 2
Skin sensitisation, category 1
Specific Target Organ Toxicity – Single exposure, category 3
Personal Protective Equipment
Eyeshields, Faceshields, Gloves, half-mask respirator (US), multi-purpose combination respirator cartridge (US)
GHS Precautionary statements
P210
MSDS Link
Hazard Class
2.1
GHS Hazard statements
H220-H332
European Hazard Symbols
Harmful (Xn)
Highly flammable (F+)GHS Signal Word
Danger
UN Number
2203
Safety Statements
9-16-33-36/37/39
RTECS
VV1400000
Product Information
Grade
electronic grade
Impurities
<5 ppm Disilane (Si2H6)
<1 ppm Carbon monoxide (CO)
<2 ppm Nitrogen (N2)
<1 ppm Trisilane (Si3H8)
<2 ppm Siloxanes
<1 ppm Water (H2O)
<1 ppm THC
<1 ppm Chlorosilanes
<1 ppm Carbon dioxide (CO2)
<100 ppm Hydrogen (H2)
Purity
≥99.998%
Linear Formula
SiH4
Physical Property
Melting Point
-185 °C(lit.)
Boiling Point
-112 °C(lit.)
Resistivity
>1000 Ω-cm
Apperance
gas
Transition Temperature
critical temperature -3.4 °C
Vapor Density
1.1 (vs air)
Density
1.114 g/mL at 25 °C(lit.)
Molecule Details
Application
Silane is used in the deposition of amorphous silicon, epitaxial silicon and silicon based dielectrics. Polycrystalline films can be deposited on silicon wafers and glass substrates via remote plasma chemical vapor deposition (RPCVD) using a SiH4-SiF2-H2 gas mixture.1,2 Silane is used widely as a dopant in the formation of III-IV semiconductor materials.3
Recommended products
Stainless steel regulators Z527416 or Z527424 are recommended.
Silane is used in the deposition of amorphous silicon, epitaxial silicon and silicon based dielectrics. Polycrystalline films can be deposited on silicon wafers and glass substrates via remote plasma chemical vapor deposition (RPCVD) using a SiH4-SiF2-H2 gas mixture.1,2 Silane is used widely as a dopant in the formation of III-IV semiconductor materials.3
Recommended products
Stainless steel regulators Z527416 or Z527424 are recommended.
Molecular Spectra
No Data Available
Click here to submit data
References
No Data Available
Click here to submit data